Cuid Uimhir :
IPI80P04P4L04AKSA1
Monaróir :
Infineon Technologies
Cur síos :
MOSFET P-CH TO262-3
Sraith :
Automotive, AEC-Q101, OptiMOS™
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
40V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
80A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
4.7 mOhm @ 80A, 10V
Vgs (ú) (Max) @ Id :
2.2V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
176nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
3800pF @ 25V
Díscaoileadh Cumhachta (Max) :
125W (Tc)
Teocht Oibriúcháin :
-55°C ~ 175°C (TJ)
Cineál Gléasta :
Through Hole
Pacáiste Gléas Soláthraithe :
PG-TO262-3-1
Pacáiste / Cás :
TO-262-3 Long Leads, I²Pak, TO-262AA