SI4447DY-T1-E3 Praghsáil (USD) [275873pcs Stoc]
- 1 pcs$0.13407
- 2,500 pcs$0.11355
- Cuid Uimhir:
- SI4447DY-T1-E3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET P-CH 40V 3.3A 8-SOIC.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - Bipolar (BJT) - RF, Trasraitheoirí - IGBTanna - Modúil, Transistors - Bipolar (BJT) - Aonair, Trasraitheoirí - FETanna, MOSFETanna - Aonair, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Trasraitheoirí - Cuspóir Speisialta, Thyristors - SCRanna - Modúil and Diodes - Rectifiers Bridge ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SI4447DY-T1-E3 electronic components. SI4447DY-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI4447DY-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4447DY-T1-E3 Tréithe Táirge
Cuid Uimhir :
SI4447DY-T1-E3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET P-CH 40V 3.3A 8-SOIC
Sraith :
TrenchFET®
Stádas Cuid :
Active
Cineál FET :
P-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
40V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
3.3A (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) :
15V, 10V
Rds On (Max) @ Id, Vgs :
72 mOhm @ 4.5A, 15V
Vgs (ú) (Max) @ Id :
2.2V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
14nC @ 4.5V
Vgs (Max) :
±16V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
805pF @ 20V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
1.1W (Ta)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
8-SO
Pacáiste / Cás :
8-SOIC (0.154", 3.90mm Width)
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