Infineon Technologies - IPB120N10S405ATMA1

KEY Part #: K6418405

IPB120N10S405ATMA1 Praghsáil (USD) [62237pcs Stoc]

  • 1 pcs$0.62826
  • 1,000 pcs$0.57644

Cuid Uimhir:
IPB120N10S405ATMA1
Monaróir:
Infineon Technologies
Cur síos mionsonraithe:
MOSFET N-CH TO263-3.
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Transistors - FETs, MOSFETs - RF, Diodes - Zener - Aonair, Trasraitheoirí - Neamhfheidhmiú Inchláraithe, Diodes - Rectifiers Bridge, Túistéirí - TRIACanna, Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Diodes - Zener - Sraith and Transistors - Bipolar (BJT) - Aonair ...
Buntáiste iomaíoch:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB120N10S405ATMA1 Tréithe Táirge

Cuid Uimhir : IPB120N10S405ATMA1
Monaróir : Infineon Technologies
Cur síos : MOSFET N-CH TO263-3
Sraith : Automotive, AEC-Q101, OptiMOS™
Stádas Cuid : Active
Cineál FET : N-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 100V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 120A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) : 10V
Rds On (Max) @ Id, Vgs : 5 mOhm @ 100A, 10V
Vgs (ú) (Max) @ Id : 3.5V @ 120µA
Muirear Geata (Qg) (Max) @ Vgs : 91nC @ 10V
Vgs (Max) : ±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 6540pF @ 25V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 190W (Tc)
Teocht Oibriúcháin : -55°C ~ 175°C (TJ)
Cineál Gléasta : Surface Mount
Pacáiste Gléas Soláthraithe : D²PAK (TO-263AB)
Pacáiste / Cás : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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