SI2308BDS-T1-GE3 Praghsáil (USD) [514079pcs Stoc]
- 1 pcs$0.07195
- 3,000 pcs$0.06474
- Cuid Uimhir:
- SI2308BDS-T1-GE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET N-CH 60V 2.3A SOT23-3.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Rectifiers Bridge, Túistéirí - TRIACanna, Diodes - Rectifiers - Eagair, Trasraitheoirí - IGBTanna - Aonair, Diodes - RF, Trasraitheoirí - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Aonair and Thyristors - SCRanna - Modúil ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SI2308BDS-T1-GE3 electronic components. SI2308BDS-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI2308BDS-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI2308BDS-T1-GE3 Tréithe Táirge
Cuid Uimhir :
SI2308BDS-T1-GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET N-CH 60V 2.3A SOT23-3
Sraith :
TrenchFET®
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
60V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
2.3A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
156 mOhm @ 1.9A, 10V
Vgs (ú) (Max) @ Id :
3V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
6.8nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
190pF @ 30V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
1.09W (Ta), 1.66W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
SOT-23-3 (TO-236)
Pacáiste / Cás :
TO-236-3, SC-59, SOT-23-3
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