Cuid Uimhir :
TPN4R303NL,L1Q
Monaróir :
Toshiba Semiconductor and Storage
Cur síos :
MOSFET N-CH 30V 63A 8TSON
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
30V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
40A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
4.3 mOhm @ 20A, 10V
Vgs (ú) (Max) @ Id :
2.3V @ 200µA
Muirear Geata (Qg) (Max) @ Vgs :
14.8nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
1400pF @ 15V
Díscaoileadh Cumhachta (Max) :
700mW (Ta), 34W (Tc)
Teocht Oibriúcháin :
150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
8-TSON Advance (3.3x3.3)
Pacáiste / Cás :
8-PowerVDFN