Toshiba Semiconductor and Storage - TK4R3E06PL,S1X

KEY Part #: K6400923

TK4R3E06PL,S1X Praghsáil (USD) [47232pcs Stoc]

  • 1 pcs$0.91146
  • 50 pcs$0.73469
  • 100 pcs$0.66123
  • 500 pcs$0.51430
  • 1,000 pcs$0.42613

Cuid Uimhir:
TK4R3E06PL,S1X
Monaróir:
Toshiba Semiconductor and Storage
Cur síos mionsonraithe:
X35 PB-F POWER MOSFET TRANSISTOR.
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Diodes - RF, Trasraitheoirí - Bipolar (BJT) - RF, Trasraitheoirí - Neamhfheidhmiú Inchláraithe, Thyristors - SCRanna, Diodes - Rectifiers - Eagair, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon and Diodes - Zener - Aonair ...
Buntáiste iomaíoch:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK4R3E06PL,S1X Tréithe Táirge

Cuid Uimhir : TK4R3E06PL,S1X
Monaróir : Toshiba Semiconductor and Storage
Cur síos : X35 PB-F POWER MOSFET TRANSISTOR
Sraith : U-MOSIX-H
Stádas Cuid : Active
Cineál FET : N-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 60V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 80A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 7.2 mOhm @ 15A, 4.5V
Vgs (ú) (Max) @ Id : 2.5V @ 500µA
Muirear Geata (Qg) (Max) @ Vgs : 48.2nC @ 10V
Vgs (Max) : ±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 3280pF @ 30V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 87W (Tc)
Teocht Oibriúcháin : 175°C (TJ)
Cineál Gléasta : Through Hole
Pacáiste Gléas Soláthraithe : TO-220
Pacáiste / Cás : TO-220-3