TK31J60W,S1VQ Praghsáil (USD) [11067pcs Stoc]
- 1 pcs$4.09851
- 25 pcs$3.35902
- 100 pcs$3.03127
- 500 pcs$2.53971
- Cuid Uimhir:
- TK31J60W,S1VQ
- Monaróir:
- Toshiba Semiconductor and Storage
- Cur síos mionsonraithe:
- MOSFET N CH 600V 30.8A TO-3PN.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - Bipolar (BJT) - Sraitheanna, Thyristors - SCRanna, Transistors - FETs, MOSFETs - RF, Trasraitheoirí - IGBTanna - Modúil, Trasraitheoirí - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Diodes - Zener - Aonair and Diodes - Rectifiers Bridge ...
- Buntáiste iomaíoch:
- We specialize in Toshiba Semiconductor and Storage TK31J60W,S1VQ electronic components. TK31J60W,S1VQ can be shipped within 24 hours after order. If you have any demands for TK31J60W,S1VQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK31J60W,S1VQ Tréithe Táirge
Cuid Uimhir :
TK31J60W,S1VQ
Monaróir :
Toshiba Semiconductor and Storage
Cur síos :
MOSFET N CH 600V 30.8A TO-3PN
Sraith :
DTMOSIV
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
600V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
30.8A (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
88 mOhm @ 15.4A, 10V
Vgs (ú) (Max) @ Id :
3.7V @ 1.5mA
Muirear Geata (Qg) (Max) @ Vgs :
86nC @ 10V
Vgs (Max) :
±30V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
3000pF @ 300V
Gné FET :
Super Junction
Díscaoileadh Cumhachta (Max) :
230W (Tc)
Teocht Oibriúcháin :
150°C (TJ)
Cineál Gléasta :
Through Hole
Pacáiste Gléas Soláthraithe :
TO-3P(N)
Pacáiste / Cás :
TO-3P-3, SC-65-3
An nuacht is déanaí
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