Infineon Technologies - IPB70N10SL16ATMA1

KEY Part #: K6418392

IPB70N10SL16ATMA1 Praghsáil (USD) [61718pcs Stoc]

  • 1 pcs$0.63353
  • 1,000 pcs$0.60332

Cuid Uimhir:
IPB70N10SL16ATMA1
Monaróir:
Infineon Technologies
Cur síos mionsonraithe:
MOSFET N-CH 100V 70A TO263-3.
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Trasraitheoirí - Cuspóir Speisialta, Transistors - Bipolar (BJT) - Aonair, Diodes - RF, Diodes - Rectifiers - Eagair, Diodes - Zener - Sraith and Trasraitheoirí - IGBTanna - Eagair ...
Buntáiste iomaíoch:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB70N10SL16ATMA1 Tréithe Táirge

Cuid Uimhir : IPB70N10SL16ATMA1
Monaróir : Infineon Technologies
Cur síos : MOSFET N-CH 100V 70A TO263-3
Sraith : SIPMOS®
Stádas Cuid : Not For New Designs
Cineál FET : N-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 100V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 70A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 16 mOhm @ 50A, 10V
Vgs (ú) (Max) @ Id : 2V @ 2mA
Muirear Geata (Qg) (Max) @ Vgs : 240nC @ 10V
Vgs (Max) : ±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 4540pF @ 25V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 250W (Tc)
Teocht Oibriúcháin : -55°C ~ 175°C (TJ)
Cineál Gléasta : Surface Mount
Pacáiste Gléas Soláthraithe : PG-TO263-3-2
Pacáiste / Cás : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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