Infineon Technologies - IPG20N06S2L35AATMA1

KEY Part #: K6524960

IPG20N06S2L35AATMA1 Praghsáil (USD) [138965pcs Stoc]

  • 1 pcs$0.26616
  • 5,000 pcs$0.22537

Cuid Uimhir:
IPG20N06S2L35AATMA1
Monaróir:
Infineon Technologies
Cur síos mionsonraithe:
MOSFET 2N-CH 8TDSON.
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Zener - Aonair, Diodes - Rectifiers Bridge, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Trasraitheoirí - FETanna, MOSFETanna - Aonair, Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Diodes - Rectifiers - Eagair, Thyristors - SCRanna and Trasraitheoirí - IGBTanna - Aonair ...
Buntáiste iomaíoch:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPG20N06S2L35AATMA1 Tréithe Táirge

Cuid Uimhir : IPG20N06S2L35AATMA1
Monaróir : Infineon Technologies
Cur síos : MOSFET 2N-CH 8TDSON
Sraith : Automotive, AEC-Q101, OptiMOS™
Stádas Cuid : Active
Cineál FET : 2 N-Channel (Dual)
Gné FET : Logic Level Gate
Drain to Voltage Source (Vdss) : 55V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 2A (Tc)
Rds On (Max) @ Id, Vgs : 35 mOhm @ 15A, 10V
Vgs (ú) (Max) @ Id : 2V @ 27µA
Muirear Geata (Qg) (Max) @ Vgs : 23nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 790pF @ 25V
Cumhacht - Max : 65W
Teocht Oibriúcháin : -55°C ~ 175°C (TJ)
Cineál Gléasta : Surface Mount
Pacáiste / Cás : 8-PowerVDFN
Pacáiste Gléas Soláthraithe : PG-TDSON-8-10

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