Monaróir :
Rohm Semiconductor
Cur síos :
MOSFET N/P-CH 100V 2A/1.5A TSMT8
Cineál FET :
N and P-Channel
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
100V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
2A, 1.5A
Rds On (Max) @ Id, Vgs :
325 mOhm @ 2A, 10V
Vgs (ú) (Max) @ Id :
2.5V @ 1mA
Muirear Geata (Qg) (Max) @ Vgs :
4.7nC @ 5V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
290pF @ 25V
Teocht Oibriúcháin :
150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-SMD, Flat Lead
Pacáiste Gléas Soláthraithe :
TSMT8