Vishay Semiconductor Diodes Division - US1GHE3_A/H

KEY Part #: K6455566

US1GHE3_A/H Praghsáil (USD) [636328pcs Stoc]

  • 1 pcs$0.05813
  • 1,800 pcs$0.05412
  • 3,600 pcs$0.04961
  • 5,400 pcs$0.04660
  • 12,600 pcs$0.04360
  • 45,000 pcs$0.04009

Cuid Uimhir:
US1GHE3_A/H
Monaróir:
Vishay Semiconductor Diodes Division
Cur síos mionsonraithe:
DIODE GEN PURP 400V 1A DO214AC. Rectifiers 400 Volt 1.0A 50ns 30 Amp IFSM
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Modúil Tiomána Cumhachta, Trasraitheoirí - IGBTanna - Eagair, Transistors - FETs, MOSFETs - RF, Trasraitheoirí - Cuspóir Speisialta, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Trasraitheoirí - FETanna, MOSFETanna - Aonair, Trasraitheoirí - FETs, MOSFETs - Eagair and Diodes - RF ...
Buntáiste iomaíoch:
We specialize in Vishay Semiconductor Diodes Division US1GHE3_A/H electronic components. US1GHE3_A/H can be shipped within 24 hours after order. If you have any demands for US1GHE3_A/H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

US1GHE3_A/H Tréithe Táirge

Cuid Uimhir : US1GHE3_A/H
Monaróir : Vishay Semiconductor Diodes Division
Cur síos : DIODE GEN PURP 400V 1A DO214AC
Sraith : Automotive, AEC-Q101
Stádas Cuid : Active
Cineál Dé-óid : Standard
Voltas - DC Droim ar ais (Vr) (Max) : 400V
Reatha - Meáncheartaithe (Io) : 1A
Voltas - Ar Aghaidh (Vf) (Max) @ If : 1V @ 1A
Luas : Fast Recovery =< 500ns, > 200mA (Io)
Am Téarnaimh Droim ar Ais (trr) : 50ns
Reatha - Sceitheadh ​​Droim ar Ais @ Vr : 10µA @ 400V
Capacitance @ Vr, F : 15pF @ 4V, 1MHz
Cineál Gléasta : Surface Mount
Pacáiste / Cás : DO-214AC, SMA
Pacáiste Gléas Soláthraithe : DO-214AC (SMA)
Teocht Oibriúcháin - Acomhal : -55°C ~ 150°C

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