BSB008NE2LXXUMA1 Praghsáil (USD) [84386pcs Stoc]
- 1 pcs$0.46336
- 5,000 pcs$0.39460
- Cuid Uimhir:
- BSB008NE2LXXUMA1
- Monaróir:
- Infineon Technologies
- Cur síos mionsonraithe:
- MOSFET N-CH 25V 46A 2WDSON.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Rectifiers - Eagair, Trasraitheoirí - Cuspóir Speisialta, Diodes - Rectifiers - Aonair, Trasraitheoirí - IGBTanna - Modúil, Trasraitheoirí - IGBTanna - Aonair, Transistors - Bipolar (BJT) - Aonair, Thyristors - SCRanna - Modúil and Trasraitheoirí - Bipolar (BJT) - Sraitheanna ...
- Buntáiste iomaíoch:
- We specialize in Infineon Technologies BSB008NE2LXXUMA1 electronic components. BSB008NE2LXXUMA1 can be shipped within 24 hours after order. If you have any demands for BSB008NE2LXXUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSB008NE2LXXUMA1 Tréithe Táirge
Cuid Uimhir :
BSB008NE2LXXUMA1
Monaróir :
Infineon Technologies
Cur síos :
MOSFET N-CH 25V 46A 2WDSON
Sraith :
OptiMOS™
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
25V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
46A (Ta), 180A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
0.8 mOhm @ 30A, 10V
Vgs (ú) (Max) @ Id :
2V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
343nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
16000pF @ 12V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
2.8W (Ta), 89W (Tc)
Teocht Oibriúcháin :
-40°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
MG-WDSON-2, CanPAK M™
Pacáiste / Cás :
3-WDSON
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