Cuid Uimhir :
TK50P04M1(T6RSS-Q)
Monaróir :
Toshiba Semiconductor and Storage
Cur síos :
MOSFET N-CH 40V 50A DP TO252-3
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
40V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
50A (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
8.7 mOhm @ 25A, 10V
Vgs (ú) (Max) @ Id :
2.3V @ 500µA
Muirear Geata (Qg) (Max) @ Vgs :
38nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
2600pF @ 10V
Díscaoileadh Cumhachta (Max) :
60W (Tc)
Teocht Oibriúcháin :
150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
DP
Pacáiste / Cás :
TO-252-3, DPak (2 Leads + Tab), SC-63