Vishay Semiconductor Diodes Division - 1N6483-E3/97

KEY Part #: K6458275

1N6483-E3/97 Praghsáil (USD) [1025340pcs Stoc]

  • 1 pcs$0.03807
  • 10,000 pcs$0.03788

Cuid Uimhir:
1N6483-E3/97
Monaróir:
Vishay Semiconductor Diodes Division
Cur síos mionsonraithe:
DIODE GEN PURP 800V 1A DO213AB. Rectifiers 800 Volt 1.0 Amp 30 Amp IFSM
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Diodes - Rectifiers - Eagair, Transistors - Bipolar (BJT) - Aonair, Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Aonair, Trasraitheoirí - IGBTanna - Eagair, Diodes - RF and Trasraitheoirí - Bipolar (BJT) - RF ...
Buntáiste iomaíoch:
We specialize in Vishay Semiconductor Diodes Division 1N6483-E3/97 electronic components. 1N6483-E3/97 can be shipped within 24 hours after order. If you have any demands for 1N6483-E3/97, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N6483-E3/97 Tréithe Táirge

Cuid Uimhir : 1N6483-E3/97
Monaróir : Vishay Semiconductor Diodes Division
Cur síos : DIODE GEN PURP 800V 1A DO213AB
Sraith : SUPERECTIFIER®
Stádas Cuid : Active
Cineál Dé-óid : Standard
Voltas - DC Droim ar ais (Vr) (Max) : 800V
Reatha - Meáncheartaithe (Io) : 1A
Voltas - Ar Aghaidh (Vf) (Max) @ If : 1.1V @ 1A
Luas : Standard Recovery >500ns, > 200mA (Io)
Am Téarnaimh Droim ar Ais (trr) : -
Reatha - Sceitheadh ​​Droim ar Ais @ Vr : 10µA @ 800V
Capacitance @ Vr, F : 8pF @ 4V, 1MHz
Cineál Gléasta : Surface Mount
Pacáiste / Cás : DO-213AB, MELF (Glass)
Pacáiste Gléas Soláthraithe : DO-213AB
Teocht Oibriúcháin - Acomhal : -65°C ~ 175°C

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