IPI086N10N3GXKSA1 Praghsáil (USD) [53136pcs Stoc]
- 1 pcs$0.67732
- 10 pcs$0.59872
- 100 pcs$0.47325
- 500 pcs$0.34717
- 1,000 pcs$0.27408
- Cuid Uimhir:
- IPI086N10N3GXKSA1
- Monaróir:
- Infineon Technologies
- Cur síos mionsonraithe:
- MOSFET N-CH 100V 80A TO262-3.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Zener - Aonair, Túistéirí - DIACs, SIDACanna, Trasraitheoirí - IGBTanna - Aonair, Trasraitheoirí - Neamhfheidhmiú Inchláraithe, Transistors - Bipolar (BJT) - Aonair, Modúil Tiomána Cumhachta, Transistors - FETs, MOSFETs - RF and Thyristors - SCRanna ...
- Buntáiste iomaíoch:
- We specialize in Infineon Technologies IPI086N10N3GXKSA1 electronic components. IPI086N10N3GXKSA1 can be shipped within 24 hours after order. If you have any demands for IPI086N10N3GXKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPI086N10N3GXKSA1 Tréithe Táirge
Cuid Uimhir :
IPI086N10N3GXKSA1
Monaróir :
Infineon Technologies
Cur síos :
MOSFET N-CH 100V 80A TO262-3
Sraith :
OptiMOS™
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
100V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
80A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
6V, 10V
Rds On (Max) @ Id, Vgs :
8.6 mOhm @ 73A, 10V
Vgs (ú) (Max) @ Id :
3.5V @ 75µA
Muirear Geata (Qg) (Max) @ Vgs :
55nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
3980pF @ 50V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
125W (Tc)
Teocht Oibriúcháin :
-55°C ~ 175°C (TJ)
Cineál Gléasta :
Through Hole
Pacáiste Gléas Soláthraithe :
PG-TO262-3
Pacáiste / Cás :
TO-262-3 Long Leads, I²Pak, TO-262AA
An nuacht is déanaí
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