[8866pcs Stoc]
- Cuid Uimhir:
- PHM25NQ10T,518
- Monaróir:
- NXP USA Inc.
- Cur síos mionsonraithe:
- MOSFET N-CH 100V 30.7A 8HVSON.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - FETanna, MOSFETanna - Aonair, Modúil Tiomána Cumhachta, Thyristors - SCRanna - Modúil, Thyristors - SCRanna, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Trasraitheoirí - Bipolar (BJT) - Sraitheanna, Trasraitheoirí - IGBTanna - Eagair and Túistéirí - TRIACanna ...
- Buntáiste iomaíoch:
- We specialize in NXP USA Inc. PHM25NQ10T,518 electronic components. PHM25NQ10T,518 can be shipped within 24 hours after order. If you have any demands for PHM25NQ10T,518, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHM25NQ10T,518 Tréithe Táirge
Cuid Uimhir :
PHM25NQ10T,518
Monaróir :
NXP USA Inc.
Cur síos :
MOSFET N-CH 100V 30.7A 8HVSON
Sraith :
TrenchMOS™
Stádas Cuid :
Obsolete
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
100V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
30.7A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
30 mOhm @ 10A, 10V
Vgs (ú) (Max) @ Id :
4V @ 1mA
Muirear Geata (Qg) (Max) @ Vgs :
26.6nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
1800pF @ 20V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
62.5W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
8-HVSON (6x5)
Pacáiste / Cás :
8-VDFN Exposed Pad
An nuacht is déanaí
B'fhéidir go mbeadh spéis agat freisin
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