DF200R12W1H3B27BOMA1 Praghsáil (USD) [1809pcs Stoc]
- 1 pcs$23.94315
- Cuid Uimhir:
- DF200R12W1H3B27BOMA1
- Monaróir:
- Infineon Technologies
- Cur síos mionsonraithe:
- IGBT MODULE VCES 1200V 200A.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Zener - Sraith, Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers Bridge, Trasraitheoirí - IGBTanna - Aonair, Trasraitheoirí - Bipolar (BJT) - RF, Trasraitheoirí - IGBTanna - Modúil, Transistors - Bipolar (BJT) - Aonair and Thyristors - SCRanna ...
- Buntáiste iomaíoch:
- We specialize in Infineon Technologies DF200R12W1H3B27BOMA1 electronic components. DF200R12W1H3B27BOMA1 can be shipped within 24 hours after order. If you have any demands for DF200R12W1H3B27BOMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DF200R12W1H3B27BOMA1 Tréithe Táirge
Cuid Uimhir :
DF200R12W1H3B27BOMA1
Monaróir :
Infineon Technologies
Cur síos :
IGBT MODULE VCES 1200V 200A
Sraith :
-
Stádas Cuid :
Active
Cineál IGBT :
-
Cumraíocht :
2 Independent
Miondealú Astaire an Voltais - Bailitheoir (Max) :
1200V
Reatha - Bailitheoir (Ic) (Max) :
30A
Cumhacht - Max :
375W
Vce (ar) (Max) @ Vge, Ic :
1.3V @ 15V, 30A
Atá ann faoi láthair - Cutoff an Bhailitheora (Max) :
1mA
Ionchur Capacitance (Cies) @ Vce :
2nF @ 25V
Ionchur :
Standard
NTC Teirmeastar :
Yes
Teocht Oibriúcháin :
-40°C ~ 150°C
Cineál Gléasta :
Chassis Mount
Pacáiste / Cás :
Module
Pacáiste Gléas Soláthraithe :
Module
An nuacht is déanaí
B'fhéidir go mbeadh spéis agat freisin
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