Monaróir :
Infineon Technologies
Cur síos :
MOSFET N/P-CH 60V 3.1A/2A 8SOIC
Cineál FET :
N and P-Channel
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
60V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
3.1A, 2A
Rds On (Max) @ Id, Vgs :
110 mOhm @ 3.1A, 10V
Vgs (ú) (Max) @ Id :
2V @ 20µA
Muirear Geata (Qg) (Max) @ Vgs :
22.5nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
380pF @ 25V
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-SOIC (0.154", 3.90mm Width)
Pacáiste Gléas Soláthraithe :
PG-DSO-8