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Mura bhfuil do shuíomh liostaithe, roghnaigh ceann amháin díobh seo a leanas le do thoil:

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  1. Baile
  2. Táirgí
  3. DRAM
  4. LPDDR4X
  5. K4U6E3S4AA-MGCL

Samsung Semiconductor - K4U6E3S4AA-MGCL

KEY Part #: K7359741

[14732pcs Stoc]

    Cuid Uimhir:
    K4U6E3S4AA-MGCL
    Monaróir:
    Samsung Semiconductor
    Cur síos mionsonraithe:
    16 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 200FBGA Mass Production.
    Am luaidhe caighdeánach an déantóra:
    I stoc
    Seilfré:
    Bliain
    Slis Ó:
    Hong Cong
    RoHS:
    Modh íocaíochta:
    Bealach loingsithe:
    Catagóirí Teaghlaigh:
    Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: SLC Nand, GDDR5, LPDDR5, LPDDR4, DDR4, LPDDR3, HBM Flarebolt and HBM Aquabolt ...
    Buntáiste iomaíoch:
    We specialize in Samsung Semiconductor K4U6E3S4AA-MGCL electronic components. K4U6E3S4AA-MGCL can be shipped within 24 hours after order. If you have any demands for K4U6E3S4AA-MGCL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4U6E3S4AA-MGCL Tréithe Táirge

    Cuid Uimhir : K4U6E3S4AA-MGCL
    Monaróir : Samsung Semiconductor
    Cur síos : 16 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 200FBGA Mass Production
    Sraith : DDR3
    Dlús : 16 Gb
    Org. : x32
    Luas : 4266 Mbps
    voltage : 1.8 / 1.1 / 0.6 V
    Meán. : -25 ~ 85 °C
    pacáiste : 200FBGA
    Stádas Táirge : Mass Production

    An nuacht is déanaí

    The future of NAND technology
    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    Unlocking the Power of Cloud Computing
    Samsung Electronics Starts Mass Producing Industry’s First 8-Gigabit Graphics DRAM (GDDR5)
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM
    Evolving Mobile Solutions: Samsung at MWC 2018
    Mass Production of Fifth-Generation V-NAND has Started
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
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    • M378A1K43CB2-CTD

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      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

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