Infineon Technologies - IPP028N08N3GXKSA1

KEY Part #: K6416565

IPP028N08N3GXKSA1 Praghsáil (USD) [16040pcs Stoc]

  • 1 pcs$2.25638
  • 10 pcs$2.01532
  • 100 pcs$1.65254
  • 500 pcs$1.33817
  • 1,000 pcs$1.07070

Cuid Uimhir:
IPP028N08N3GXKSA1
Monaróir:
Infineon Technologies
Cur síos mionsonraithe:
MOSFET N-CH 80V 100A TO220-3.
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Modúil Tiomána Cumhachta, Trasraitheoirí - FETs, MOSFETs - Eagair, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Túistéirí - TRIACanna, Thyristors - SCRanna, Thyristors - SCRanna - Modúil, Transistors - FETs, MOSFETs - RF and Trasraitheoirí - Bipolar (BJT) - Sraitheanna ...
Buntáiste iomaíoch:
We specialize in Infineon Technologies IPP028N08N3GXKSA1 electronic components. IPP028N08N3GXKSA1 can be shipped within 24 hours after order. If you have any demands for IPP028N08N3GXKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP028N08N3GXKSA1 Tréithe Táirge

Cuid Uimhir : IPP028N08N3GXKSA1
Monaróir : Infineon Technologies
Cur síos : MOSFET N-CH 80V 100A TO220-3
Sraith : OptiMOS™
Stádas Cuid : Active
Cineál FET : N-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 80V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 100A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) : 6V, 10V
Rds On (Max) @ Id, Vgs : 2.8 mOhm @ 100A, 10V
Vgs (ú) (Max) @ Id : 3.5V @ 270µA
Muirear Geata (Qg) (Max) @ Vgs : 206nC @ 10V
Vgs (Max) : ±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 14200pF @ 40V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 300W (Tc)
Teocht Oibriúcháin : -55°C ~ 175°C (TJ)
Cineál Gléasta : Through Hole
Pacáiste Gléas Soláthraithe : PG-TO220-3
Pacáiste / Cás : TO-220-3

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