SISH116DN-T1-GE3 Praghsáil (USD) [107279pcs Stoc]
- 1 pcs$0.34478
- Cuid Uimhir:
- SISH116DN-T1-GE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET N-CH 40V PPAK 1212-8SH.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Zener - Sraith, Diodes - Rectifiers - Aonair, Transistors - Bipolar (BJT) - Aonair, Diodes - Zener - Aonair, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Túistéirí - TRIACanna, Trasraitheoirí - Bipolar (BJT) - RF and Túistéirí - DIACs, SIDACanna ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SISH116DN-T1-GE3 electronic components. SISH116DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISH116DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SISH116DN-T1-GE3 Tréithe Táirge
Cuid Uimhir :
SISH116DN-T1-GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET N-CH 40V PPAK 1212-8SH
Sraith :
TrenchFET®
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
40V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
10.5A (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
7.8 mOhm @ 16.4A, 10V
Vgs (ú) (Max) @ Id :
2.5V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
23nC @ 4.5V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
-
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
1.5W (Ta)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
PowerPAK® 1212-8SH
Pacáiste / Cás :
PowerPAK® 1212-8SH
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