Infineon Technologies - IPB60R040C7ATMA1

KEY Part #: K6416290

IPB60R040C7ATMA1 Praghsáil (USD) [12957pcs Stoc]

  • 1 pcs$3.26659
  • 1,000 pcs$3.25034

Cuid Uimhir:
IPB60R040C7ATMA1
Monaróir:
Infineon Technologies
Cur síos mionsonraithe:
MOSFET N-CH 650V 50A TO263-3.
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Transistors - Bipolar (BJT) - Aonair, Thyristors - SCRanna, Trasraitheoirí - IGBTanna - Aonair, Trasraitheoirí - Bipolar (BJT) - Sraitheanna, Diodes - Zener - Aonair, Diodes - Rectifiers - Eagair, Diodes - Zener - Sraith and Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon ...
Buntáiste iomaíoch:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB60R040C7ATMA1 Tréithe Táirge

Cuid Uimhir : IPB60R040C7ATMA1
Monaróir : Infineon Technologies
Cur síos : MOSFET N-CH 650V 50A TO263-3
Sraith : CoolMOS™ C7
Stádas Cuid : Active
Cineál FET : N-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 650V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 50A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) : 10V
Rds On (Max) @ Id, Vgs : 40 mOhm @ 24.9A, 10V
Vgs (ú) (Max) @ Id : 4V @ 1.24mA
Muirear Geata (Qg) (Max) @ Vgs : 107nC @ 10V
Vgs (Max) : ±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 4340pF @ 400V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 227W (Tc)
Teocht Oibriúcháin : -55°C ~ 150°C (TJ)
Cineál Gléasta : Surface Mount
Pacáiste Gléas Soláthraithe : PG-TO263-3
Pacáiste / Cás : TO-263-4, D²Pak (3 Leads + Tab), TO-263AA

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