Infineon Technologies - IPP65R310CFDAAKSA1

KEY Part #: K6418038

IPP65R310CFDAAKSA1 Praghsáil (USD) [49700pcs Stoc]

  • 1 pcs$0.78673
  • 500 pcs$0.77619

Cuid Uimhir:
IPP65R310CFDAAKSA1
Monaróir:
Infineon Technologies
Cur síos mionsonraithe:
MOSFET N-CH 650V TO-220-3.
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Thyristors - SCRanna - Modúil, Trasraitheoirí - Neamhfheidhmiú Inchláraithe, Diodes - Zener - Aonair, Diodes - Rectifiers Bridge, Diodes - Rectifiers - Aonair, Trasraitheoirí - Bipolar (BJT) - Sraitheanna, Transistors - FETs, MOSFETs - RF and Transistors - Bipolar (BJT) - Aonair ...
Buntáiste iomaíoch:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP65R310CFDAAKSA1 Tréithe Táirge

Cuid Uimhir : IPP65R310CFDAAKSA1
Monaróir : Infineon Technologies
Cur síos : MOSFET N-CH 650V TO-220-3
Sraith : Automotive, AEC-Q101, CoolMOS™
Stádas Cuid : Not For New Designs
Cineál FET : N-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 650V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 11.4A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) : 10V
Rds On (Max) @ Id, Vgs : 310 mOhm @ 4.4A, 10V
Vgs (ú) (Max) @ Id : 4.5V @ 440µA
Muirear Geata (Qg) (Max) @ Vgs : 41nC @ 10V
Vgs (Max) : ±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 1110pF @ 100V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 104.2W (Tc)
Teocht Oibriúcháin : -40°C ~ 150°C (TJ)
Cineál Gléasta : Through Hole
Pacáiste Gléas Soláthraithe : PG-TO220-3
Pacáiste / Cás : TO-220-3

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