[1483pcs Stoc]
- Cuid Uimhir:
- SI8417DB-T2-E1
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET P-CH 12V 14.5A 2X2 6MFP.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Túistéirí - TRIACanna, Transistors - Bipolar (BJT) - Aonair, Trasraitheoirí - IGBTanna - Eagair, Diodes - Rectifiers - Eagair, Diodes - Rectifiers Bridge, Thyristors - SCRanna, Túistéirí - DIACs, SIDACanna and Trasraitheoirí - IGBTanna - Modúil ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SI8417DB-T2-E1 electronic components. SI8417DB-T2-E1 can be shipped within 24 hours after order. If you have any demands for SI8417DB-T2-E1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI8417DB-T2-E1 Tréithe Táirge
Cuid Uimhir :
SI8417DB-T2-E1
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET P-CH 12V 14.5A 2X2 6MFP
Sraith :
TrenchFET®
Stádas Cuid :
Obsolete
Cineál FET :
P-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
12V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
14.5A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
21 mOhm @ 1A, 4.5V
Vgs (ú) (Max) @ Id :
900mV @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
57nC @ 5V
Vgs (Max) :
±8V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
2220pF @ 6V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
2.9W (Ta), 6.57W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
6-Micro Foot™ (1.5x1)
Pacáiste / Cás :
6-MICRO FOOT®CSP
An nuacht is déanaí
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