[13281pcs Stoc]
- Cuid Uimhir:
- IPD110N12N3GBUMA1
- Monaróir:
- Infineon Technologies
- Cur síos mionsonraithe:
- MOSFET N-CH 120V 75A TO252-3.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Túistéirí - TRIACanna, Trasraitheoirí - FETs, MOSFETs - Eagair, Diodes - Rectifiers - Eagair, Diodes - Zener - Sraith, Trasraitheoirí - Bipolar (BJT) - RF, Thyristors - SCRanna, Thyristors - SCRanna - Modúil and Trasraitheoirí - JFETanna ...
- Buntáiste iomaíoch:
- We specialize in Infineon Technologies IPD110N12N3GBUMA1 electronic components. IPD110N12N3GBUMA1 can be shipped within 24 hours after order. If you have any demands for IPD110N12N3GBUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD110N12N3GBUMA1 Tréithe Táirge
Cuid Uimhir :
IPD110N12N3GBUMA1
Monaróir :
Infineon Technologies
Cur síos :
MOSFET N-CH 120V 75A TO252-3
Sraith :
OptiMOS™
Stádas Cuid :
Obsolete
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
120V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
75A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
11 mOhm @ 75A, 10V
Vgs (ú) (Max) @ Id :
4V @ 83µA
Muirear Geata (Qg) (Max) @ Vgs :
65nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
4310pF @ 60V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
136W (Tc)
Teocht Oibriúcháin :
-55°C ~ 175°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
PG-TO252-3
Pacáiste / Cás :
TO-252-3, DPak (2 Leads + Tab), SC-63
An nuacht is déanaí
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