Infineon Technologies - IPB140N08S404ATMA1

KEY Part #: K6418514

IPB140N08S404ATMA1 Praghsáil (USD) [66811pcs Stoc]

  • 1 pcs$0.58524
  • 1,000 pcs$0.53689

Cuid Uimhir:
IPB140N08S404ATMA1
Monaróir:
Infineon Technologies
Cur síos mionsonraithe:
MOSFET N-CH TO263-7.
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Zener - Aonair, Diodes - Rectifiers - Aonair, Trasraitheoirí - FETs, MOSFETs - Eagair, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Diodes - RF, Trasraitheoirí - IGBTanna - Eagair, Diodes - Rectifiers - Eagair and Diodes - Toilleadh Athrógach (Varicaps, Varactors) ...
Buntáiste iomaíoch:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB140N08S404ATMA1 Tréithe Táirge

Cuid Uimhir : IPB140N08S404ATMA1
Monaróir : Infineon Technologies
Cur síos : MOSFET N-CH TO263-7
Sraith : Automotive, AEC-Q101, OptiMOS™
Stádas Cuid : Active
Cineál FET : N-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 80V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 140A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) : 10V
Rds On (Max) @ Id, Vgs : 4.2 mOhm @ 100A, 10V
Vgs (ú) (Max) @ Id : 4V @ 100µA
Muirear Geata (Qg) (Max) @ Vgs : 80nC @ 10V
Vgs (Max) : ±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 5500pF @ 25V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 161W (Tc)
Teocht Oibriúcháin : -55°C ~ 175°C (TJ)
Cineál Gléasta : Surface Mount
Pacáiste Gléas Soláthraithe : PG-TO263-7-3
Pacáiste / Cás : TO-263-7, D²Pak (6 Leads + Tab)

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