IPD65R600E6ATMA1 Praghsáil (USD) [136804pcs Stoc]
- 1 pcs$0.27037
- 2,500 pcs$0.24807
- Cuid Uimhir:
- IPD65R600E6ATMA1
- Monaróir:
- Infineon Technologies
- Cur síos mionsonraithe:
- MOSFET N-CH 650V 7.3A TO252-3.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Transistors - Bipolar (BJT) - Aonair, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Diodes - Rectifiers - Aonair, Trasraitheoirí - Neamhfheidhmiú Inchláraithe, Thyristors - SCRanna, Diodes - RF, Trasraitheoirí - FETs, MOSFETs - Eagair and Trasraitheoirí - Bipolar (BJT) - RF ...
- Buntáiste iomaíoch:
- We specialize in Infineon Technologies IPD65R600E6ATMA1 electronic components. IPD65R600E6ATMA1 can be shipped within 24 hours after order. If you have any demands for IPD65R600E6ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD65R600E6ATMA1 Tréithe Táirge
Cuid Uimhir :
IPD65R600E6ATMA1
Monaróir :
Infineon Technologies
Cur síos :
MOSFET N-CH 650V 7.3A TO252-3
Sraith :
CoolMOS™ E6
Stádas Cuid :
Not For New Designs
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
650V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
7.3A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
600 mOhm @ 2.1A, 10V
Vgs (ú) (Max) @ Id :
3.5V @ 210µA
Muirear Geata (Qg) (Max) @ Vgs :
23nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
440pF @ 100V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
63W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
PG-TO252-3
Pacáiste / Cás :
TO-252-3, DPak (2 Leads + Tab), SC-63
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