SI4590DY-T1-GE3 Praghsáil (USD) [227995pcs Stoc]
- 1 pcs$0.16223
- 2,500 pcs$0.15266
- Cuid Uimhir:
- SI4590DY-T1-GE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET N/P CHAN 100V SO8 DUAL.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - Bipolar (BJT) - RF, Diodes - Toilleadh Athrógach (Varicaps, Varactors), Trasraitheoirí - FETs, MOSFETs - Eagair, Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Modúil Tiomána Cumhachta, Trasraitheoirí - Cuspóir Speisialta, Transistors - FETs, MOSFETs - RF and Thyristors - SCRanna - Modúil ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SI4590DY-T1-GE3 electronic components. SI4590DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4590DY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4590DY-T1-GE3 Tréithe Táirge
Cuid Uimhir :
SI4590DY-T1-GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET N/P CHAN 100V SO8 DUAL
Sraith :
TrenchFET®
Stádas Cuid :
Active
Cineál FET :
N and P-Channel
Gné FET :
-
Drain to Voltage Source (Vdss) :
100V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
3.4A, 2.8A
Rds On (Max) @ Id, Vgs :
57 mOhm @ 2A, 10V
Vgs (ú) (Max) @ Id :
2.5V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
11.5nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
360pF @ 50V
Cumhacht - Max :
2.4W, 3.4W
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-SOIC (0.154", 3.90mm Width)
Pacáiste Gléas Soláthraithe :
8-SO
An nuacht is déanaí
B'fhéidir go mbeadh spéis agat freisin
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