SI4100DY-T1-E3 Praghsáil (USD) [150065pcs Stoc]
- 1 pcs$0.24648
- 2,500 pcs$0.23145
- Cuid Uimhir:
- SI4100DY-T1-E3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET N-CH 100V 6.8A 8-SOIC.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Rectifiers - Eagair, Trasraitheoirí - Bipolar (BJT) - Sraitheanna, Trasraitheoirí - FETs, MOSFETs - Eagair, Transistors - FETs, MOSFETs - RF, Modúil Tiomána Cumhachta, Trasraitheoirí - IGBTanna - Eagair, Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c and Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SI4100DY-T1-E3 electronic components. SI4100DY-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI4100DY-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4100DY-T1-E3 Tréithe Táirge
Cuid Uimhir :
SI4100DY-T1-E3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET N-CH 100V 6.8A 8-SOIC
Sraith :
TrenchFET®
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
100V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
6.8A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
6V, 10V
Rds On (Max) @ Id, Vgs :
63 mOhm @ 4.4A, 10V
Vgs (ú) (Max) @ Id :
4.5V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
600pF @ 50V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
2.5W (Ta), 6W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
8-SO
Pacáiste / Cás :
8-SOIC (0.154", 3.90mm Width)
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