TK14E65W,S1X Praghsáil (USD) [30561pcs Stoc]
- 1 pcs$1.48516
- 10 pcs$1.34105
- 100 pcs$1.02238
- 500 pcs$0.79518
- 1,000 pcs$0.65887
- Cuid Uimhir:
- TK14E65W,S1X
- Monaróir:
- Toshiba Semiconductor and Storage
- Cur síos mionsonraithe:
- MOSFET N-CH 650V 13.7A TO-220.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - Neamhfheidhmiú Inchláraithe, Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Transistors - Bipolar (BJT) - Aonair, Diodes - Zener - Aonair, Diodes - Rectifiers - Eagair, Trasraitheoirí - FETs, MOSFETs - Eagair, Transistors - FETs, MOSFETs - RF and Túistéirí - DIACs, SIDACanna ...
- Buntáiste iomaíoch:
- We specialize in Toshiba Semiconductor and Storage TK14E65W,S1X electronic components. TK14E65W,S1X can be shipped within 24 hours after order. If you have any demands for TK14E65W,S1X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK14E65W,S1X Tréithe Táirge
Cuid Uimhir :
TK14E65W,S1X
Monaróir :
Toshiba Semiconductor and Storage
Cur síos :
MOSFET N-CH 650V 13.7A TO-220
Sraith :
DTMOSIV
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
650V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
13.7A (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
250 mOhm @ 6.9A, 10V
Vgs (ú) (Max) @ Id :
3.5V @ 690µA
Muirear Geata (Qg) (Max) @ Vgs :
35nC @ 10V
Vgs (Max) :
±30V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
1300pF @ 300V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
130W (Tc)
Teocht Oibriúcháin :
150°C (TJ)
Cineál Gléasta :
Through Hole
Pacáiste Gléas Soláthraithe :
TO-220
Pacáiste / Cás :
TO-220-3
An nuacht is déanaí
B'fhéidir go mbeadh spéis agat freisin
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