TSM60NB1R4CH C5G Praghsáil (USD) [103911pcs Stoc]
- 1 pcs$0.37629
- Cuid Uimhir:
- TSM60NB1R4CH C5G
- Monaróir:
- Taiwan Semiconductor Corporation
- Cur síos mionsonraithe:
- MOSFET N-CHANNEL 600V 3A TO251.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - IGBTanna - Eagair, Trasraitheoirí - Bipolar (BJT) - Sraitheanna, Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Trasraitheoirí - IGBTanna - Aonair, Diodes - Toilleadh Athrógach (Varicaps, Varactors), Trasraitheoirí - Neamhfheidhmiú Inchláraithe, Thyristors - SCRanna - Modúil and Transistors - Bipolar (BJT) - Aonair ...
- Buntáiste iomaíoch:
- We specialize in Taiwan Semiconductor Corporation TSM60NB1R4CH C5G electronic components. TSM60NB1R4CH C5G can be shipped within 24 hours after order. If you have any demands for TSM60NB1R4CH C5G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM60NB1R4CH C5G Tréithe Táirge
Cuid Uimhir :
TSM60NB1R4CH C5G
Monaróir :
Taiwan Semiconductor Corporation
Cur síos :
MOSFET N-CHANNEL 600V 3A TO251
Sraith :
-
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
600V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
3A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
1.4 Ohm @ 900mA, 10V
Vgs (ú) (Max) @ Id :
4V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
7.12nC @ 10V
Vgs (Max) :
±30V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
257.3pF @ 100V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
28.4W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Through Hole
Pacáiste Gléas Soláthraithe :
TO-251 (IPAK)
Pacáiste / Cás :
TO-251-3 Short Leads, IPak, TO-251AA
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