SIHP12N50E-GE3 Praghsáil (USD) [44322pcs Stoc]
- 1 pcs$0.88219
- 1,000 pcs$0.40012
- Cuid Uimhir:
- SIHP12N50E-GE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET N-CH 500V 10.5A TO-220AB.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - JFETanna, Trasraitheoirí - IGBTanna - Aonair, Modúil Tiomána Cumhachta, Trasraitheoirí - Bipolar (BJT) - RF, Trasraitheoirí - Bipolar (BJT) - Sraitheanna, Transistors - Bipolar (BJT) - Aonair, Thyristors - SCRanna - Modúil and Trasraitheoirí - IGBTanna - Eagair ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SIHP12N50E-GE3 electronic components. SIHP12N50E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHP12N50E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHP12N50E-GE3 Tréithe Táirge
Cuid Uimhir :
SIHP12N50E-GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET N-CH 500V 10.5A TO-220AB
Sraith :
-
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
500V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
10.5A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
380 mOhm @ 6A, 10V
Vgs (ú) (Max) @ Id :
4V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
50nC @ 10V
Vgs (Max) :
±30V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
886pF @ 100V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
114W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Through Hole
Pacáiste Gléas Soláthraithe :
TO-220AB
Pacáiste / Cás :
TO-220-3
An nuacht is déanaí
B'fhéidir go mbeadh spéis agat freisin
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