IPB038N12N3GATMA1 Praghsáil (USD) [28793pcs Stoc]
- 1 pcs$1.43140
- Cuid Uimhir:
- IPB038N12N3GATMA1
- Monaróir:
- Infineon Technologies
- Cur síos mionsonraithe:
- MOSFET N-CH 120V 120A TO263-3.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Rectifiers - Aonair, Transistors - Bipolar (BJT) - Aonair, Trasraitheoirí - IGBTanna - Modúil, Trasraitheoirí - IGBTanna - Eagair, Diodes - Rectifiers - Eagair, Diodes - Toilleadh Athrógach (Varicaps, Varactors), Trasraitheoirí - FETs, MOSFETs - Eagair and Diodes - Zener - Aonair ...
- Buntáiste iomaíoch:
- We specialize in Infineon Technologies IPB038N12N3GATMA1 electronic components. IPB038N12N3GATMA1 can be shipped within 24 hours after order. If you have any demands for IPB038N12N3GATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB038N12N3GATMA1 Tréithe Táirge
Cuid Uimhir :
IPB038N12N3GATMA1
Monaróir :
Infineon Technologies
Cur síos :
MOSFET N-CH 120V 120A TO263-3
Sraith :
OptiMOS™
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
120V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
120A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
3.8 mOhm @ 100A, 10V
Vgs (ú) (Max) @ Id :
4V @ 270µA
Muirear Geata (Qg) (Max) @ Vgs :
211nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
13800pF @ 60V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
300W (Tc)
Teocht Oibriúcháin :
-55°C ~ 175°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
D²PAK (TO-263AB)
Pacáiste / Cás :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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