Cuid Uimhir :
TPH4R10ANL,L1Q
Monaróir :
Toshiba Semiconductor and Storage
Cur síos :
X35 PB-F POWER MOSFET TRANSISTOR
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
100V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
92A (Ta), 70A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
4.1 mOhm @ 35A, 10V
Vgs (ú) (Max) @ Id :
2.5V @ 1mA
Muirear Geata (Qg) (Max) @ Vgs :
75nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
6.3nF @ 50V
Díscaoileadh Cumhachta (Max) :
2.5W (Ta), 67W (Tc)
Teocht Oibriúcháin :
150°C
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
8-SOP Advance (5x5)
Pacáiste / Cás :
8-PowerVDFN