Infineon Technologies - IPP80N08S406AKSA1

KEY Part #: K6418393

IPP80N08S406AKSA1 Praghsáil (USD) [61723pcs Stoc]

  • 1 pcs$0.63349
  • 500 pcs$0.52830

Cuid Uimhir:
IPP80N08S406AKSA1
Monaróir:
Infineon Technologies
Cur síos mionsonraithe:
MOSFET N-CH TO220-3.
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Transistors - FETs, MOSFETs - RF, Trasraitheoirí - JFETanna, Trasraitheoirí - Bipolar (BJT) - Sraitheanna, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Diodes - Rectifiers Bridge, Trasraitheoirí - IGBTanna - Modúil, Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c and Transistors - Bipolar (BJT) - Aonair ...
Buntáiste iomaíoch:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP80N08S406AKSA1 Tréithe Táirge

Cuid Uimhir : IPP80N08S406AKSA1
Monaróir : Infineon Technologies
Cur síos : MOSFET N-CH TO220-3
Sraith : Automotive, AEC-Q101, OptiMOS™
Stádas Cuid : Active
Cineál FET : N-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 80V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 80A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) : 10V
Rds On (Max) @ Id, Vgs : 5.8 mOhm @ 80A, 10V
Vgs (ú) (Max) @ Id : 4V @ 90µA
Muirear Geata (Qg) (Max) @ Vgs : 70nC @ 10V
Vgs (Max) : ±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 4800pF @ 25V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 150W (Tc)
Teocht Oibriúcháin : -55°C ~ 175°C (TJ)
Cineál Gléasta : Through Hole
Pacáiste Gléas Soláthraithe : PG-TO220-3-1
Pacáiste / Cás : TO-220-3

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