Vishay Semiconductor Diodes Division - 1N6484HE3/97

KEY Part #: K6457833

1N6484HE3/97 Praghsáil (USD) [704650pcs Stoc]

  • 1 pcs$0.05249
  • 10,000 pcs$0.04757

Cuid Uimhir:
1N6484HE3/97
Monaróir:
Vishay Semiconductor Diodes Division
Cur síos mionsonraithe:
DIODE GEN PURP 1KV 1A DO213AB. Rectifiers 1000 Volt 1.0 Amp 30 Amp IFSM
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - Cuspóir Speisialta, Diodes - Rectifiers - Aonair, Transistors - FETs, MOSFETs - RF, Trasraitheoirí - Neamhfheidhmiú Inchláraithe, Trasraitheoirí - JFETanna, Diodes - Zener - Sraith, Túistéirí - DIACs, SIDACanna and Trasraitheoirí - Bipolar (BJT) - Sraitheanna ...
Buntáiste iomaíoch:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N6484HE3/97 Tréithe Táirge

Cuid Uimhir : 1N6484HE3/97
Monaróir : Vishay Semiconductor Diodes Division
Cur síos : DIODE GEN PURP 1KV 1A DO213AB
Sraith : SUPERECTIFIER®
Stádas Cuid : Active
Cineál Dé-óid : Standard
Voltas - DC Droim ar ais (Vr) (Max) : 1000V
Reatha - Meáncheartaithe (Io) : 1A
Voltas - Ar Aghaidh (Vf) (Max) @ If : 1.1V @ 1A
Luas : Standard Recovery >500ns, > 200mA (Io)
Am Téarnaimh Droim ar Ais (trr) : -
Reatha - Sceitheadh ​​Droim ar Ais @ Vr : 10µA @ 1000V
Capacitance @ Vr, F : 8pF @ 4V, 1MHz
Cineál Gléasta : Surface Mount
Pacáiste / Cás : DO-213AB, MELF (Glass)
Pacáiste Gléas Soláthraithe : DO-213AB
Teocht Oibriúcháin - Acomhal : -65°C ~ 175°C

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