Infineon Technologies - IPD60R2K1CEBTMA1

KEY Part #: K6402517

IPD60R2K1CEBTMA1 Praghsáil (USD) [8786pcs Stoc]

  • 2,500 pcs$0.07755

Cuid Uimhir:
IPD60R2K1CEBTMA1
Monaróir:
Infineon Technologies
Cur síos mionsonraithe:
MOSFET N-CH 600V TO-252-3.
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - JFETanna, Túistéirí - DIACs, SIDACanna, Diodes - Rectifiers - Eagair, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Thyristors - SCRanna, Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Diodes - RF and Transistors - Bipolar (BJT) - Aonair ...
Buntáiste iomaíoch:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPD60R2K1CEBTMA1 Tréithe Táirge

Cuid Uimhir : IPD60R2K1CEBTMA1
Monaróir : Infineon Technologies
Cur síos : MOSFET N-CH 600V TO-252-3
Sraith : CoolMOS™ CE
Stádas Cuid : Obsolete
Cineál FET : N-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 600V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 2.3A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) : 10V
Rds On (Max) @ Id, Vgs : 2.1 Ohm @ 760mA, 10V
Vgs (ú) (Max) @ Id : 3.5V @ 60µA
Muirear Geata (Qg) (Max) @ Vgs : 6.7nC @ 10V
Vgs (Max) : ±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 140pF @ 100V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 22W (Tc)
Teocht Oibriúcháin : -40°C ~ 150°C (TJ)
Cineál Gléasta : Surface Mount
Pacáiste Gléas Soláthraithe : TO-252-3
Pacáiste / Cás : TO-252-3, DPak (2 Leads + Tab), SC-63

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