Infineon Technologies - IPB120N04S402ATMA1

KEY Part #: K6402084

IPB120N04S402ATMA1 Praghsáil (USD) [79838pcs Stoc]

  • 1 pcs$0.48975
  • 1,000 pcs$0.44934

Cuid Uimhir:
IPB120N04S402ATMA1
Monaróir:
Infineon Technologies
Cur síos mionsonraithe:
MOSFET N-CH 40V 120A TO263-3-2.
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - IGBTanna - Eagair, Diodes - Zener - Aonair, Trasraitheoirí - JFETanna, Diodes - Rectifiers - Eagair, Diodes - Rectifiers Bridge, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon and Túistéirí - TRIACanna ...
Buntáiste iomaíoch:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB120N04S402ATMA1 Tréithe Táirge

Cuid Uimhir : IPB120N04S402ATMA1
Monaróir : Infineon Technologies
Cur síos : MOSFET N-CH 40V 120A TO263-3-2
Sraith : OptiMOS™
Stádas Cuid : Active
Cineál FET : N-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 40V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 120A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) : 10V
Rds On (Max) @ Id, Vgs : 1.8 mOhm @ 100A, 10V
Vgs (ú) (Max) @ Id : 4V @ 110µA
Muirear Geata (Qg) (Max) @ Vgs : 134nC @ 10V
Vgs (Max) : ±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 10740pF @ 25V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 158W (Tc)
Teocht Oibriúcháin : -55°C ~ 175°C (TJ)
Cineál Gléasta : Surface Mount
Pacáiste Gléas Soláthraithe : D²PAK (TO-263AB)
Pacáiste / Cás : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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