TPN2R805PL,L1Q Praghsáil (USD) [231947pcs Stoc]
- 1 pcs$0.15947
- Cuid Uimhir:
- TPN2R805PL,L1Q
- Monaróir:
- Toshiba Semiconductor and Storage
- Cur síos mionsonraithe:
- X35 PB-F POWER MOSFET TRANSISTOR.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Thyristors - SCRanna, Transistors - Bipolar (BJT) - Aonair, Trasraitheoirí - IGBTanna - Aonair, Diodes - Rectifiers Bridge, Diodes - Rectifiers - Eagair, Diodes - RF, Thyristors - SCRanna - Modúil and Trasraitheoirí - JFETanna ...
- Buntáiste iomaíoch:
- We specialize in Toshiba Semiconductor and Storage TPN2R805PL,L1Q electronic components. TPN2R805PL,L1Q can be shipped within 24 hours after order. If you have any demands for TPN2R805PL,L1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPN2R805PL,L1Q Tréithe Táirge
Cuid Uimhir :
TPN2R805PL,L1Q
Monaróir :
Toshiba Semiconductor and Storage
Cur síos :
X35 PB-F POWER MOSFET TRANSISTOR
Sraith :
U-MOSIX-H
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
45V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
139A (Ta), 80A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
2.8 mOhm @ 40A, 10V
Vgs (ú) (Max) @ Id :
2.4V @ 300µA
Muirear Geata (Qg) (Max) @ Vgs :
39nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
3.2nF @ 22.5V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
2.67W (Ta), 104W (Tc)
Teocht Oibriúcháin :
175°C
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
8-TSON Advance (3.3x3.3)
Pacáiste / Cás :
8-PowerVDFN
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