SIB900EDK-T1-GE3 Praghsáil (USD) [414489pcs Stoc]
- 1 pcs$0.08924
- 3,000 pcs$0.08429
- Cuid Uimhir:
- SIB900EDK-T1-GE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET 2N-CH 20V 1.5A SC-75-6.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Rectifiers - Aonair, Diodes - RF, Trasraitheoirí - Bipolar (BJT) - RF, Diodes - Zener - Aonair, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Diodes - Toilleadh Athrógach (Varicaps, Varactors), Diodes - Rectifiers - Eagair and Trasraitheoirí - IGBTanna - Modúil ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SIB900EDK-T1-GE3 electronic components. SIB900EDK-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIB900EDK-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIB900EDK-T1-GE3 Tréithe Táirge
Cuid Uimhir :
SIB900EDK-T1-GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET 2N-CH 20V 1.5A SC-75-6
Sraith :
TrenchFET®
Stádas Cuid :
Active
Cineál FET :
2 N-Channel (Dual)
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
20V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
1.5A
Rds On (Max) @ Id, Vgs :
225 mOhm @ 1.6A, 4.5V
Vgs (ú) (Max) @ Id :
1V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
1.7nC @ 4.5V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
-
Cumhacht - Max :
3.1W
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
PowerPAK® SC-75-6L Dual
Pacáiste Gléas Soláthraithe :
PowerPAK® SC-75-6L Dual
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