SI2367DS-T1-GE3 Praghsáil (USD) [575693pcs Stoc]
- 1 pcs$0.06425
- 3,000 pcs$0.06069
- Cuid Uimhir:
- SI2367DS-T1-GE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET P-CH 20V 3.8A SOT-23.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - Neamhfheidhmiú Inchláraithe, Trasraitheoirí - IGBTanna - Modúil, Transistors - FETs, MOSFETs - RF, Trasraitheoirí - Bipolar (BJT) - RF, Thyristors - SCRanna, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Trasraitheoirí - IGBTanna - Aonair and Modúil Tiomána Cumhachta ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SI2367DS-T1-GE3 electronic components. SI2367DS-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI2367DS-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI2367DS-T1-GE3 Tréithe Táirge
Cuid Uimhir :
SI2367DS-T1-GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET P-CH 20V 3.8A SOT-23
Sraith :
TrenchFET®
Stádas Cuid :
Active
Cineál FET :
P-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
20V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
3.8A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
66 mOhm @ 2.5A, 4.5V
Vgs (ú) (Max) @ Id :
1V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
23nC @ 8V
Vgs (Max) :
±8V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
561pF @ 10V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
960mW (Ta), 1.7W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
SOT-23-3 (TO-236)
Pacáiste / Cás :
TO-236-3, SC-59, SOT-23-3
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