Vishay Semiconductor Diodes Division - GBU8J-02E3/P

KEY Part #: K6541044

[12505pcs Stoc]


    Cuid Uimhir:
    GBU8J-02E3/P
    Monaróir:
    Vishay Semiconductor Diodes Division
    Cur síos mionsonraithe:
    BRIDGE RECT 1PHASE 600V 3.9A GBU.
    Am luaidhe caighdeánach an déantóra:
    I stoc
    Seilfré:
    Bliain
    Slis Ó:
    Hong Cong
    RoHS:
    Modh íocaíochta:
    Bealach loingsithe:
    Catagóirí Teaghlaigh:
    Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Rectifiers - Aonair, Diodes - RF, Trasraitheoirí - FETanna, MOSFETanna - Aonair, Diodes - Rectifiers - Eagair, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Trasraitheoirí - FETs, MOSFETs - Eagair, Trasraitheoirí - Cuspóir Speisialta and Modúil Tiomána Cumhachta ...
    Buntáiste iomaíoch:
    We specialize in Vishay Semiconductor Diodes Division GBU8J-02E3/P electronic components. GBU8J-02E3/P can be shipped within 24 hours after order. If you have any demands for GBU8J-02E3/P, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    GBU8J-02E3/P Tréithe Táirge

    Cuid Uimhir : GBU8J-02E3/P
    Monaróir : Vishay Semiconductor Diodes Division
    Cur síos : BRIDGE RECT 1PHASE 600V 3.9A GBU
    Sraith : -
    Stádas Cuid : Obsolete
    Cineál Dé-óid : Single Phase
    Teicneolaíocht : Standard
    Voltas - Peak Reverse (Max) : 600V
    Reatha - Meáncheartaithe (Io) : 3.9A
    Voltas - Ar Aghaidh (Vf) (Max) @ If : 1V @ 8A
    Reatha - Sceitheadh ​​Droim ar Ais @ Vr : 5µA @ 600V
    Teocht Oibriúcháin : -55°C ~ 150°C (TJ)
    Cineál Gléasta : Through Hole
    Pacáiste / Cás : 4-SIP, GBU
    Pacáiste Gléas Soláthraithe : GBU

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