SI4477DY-T1-GE3 Praghsáil (USD) [135773pcs Stoc]
- 1 pcs$0.27242
- 2,500 pcs$0.25581
- Cuid Uimhir:
- SI4477DY-T1-GE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET P-CH 20V 26.6A 8-SOIC.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - Neamhfheidhmiú Inchláraithe, Trasraitheoirí - Bipolar (BJT) - Sraitheanna, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Thyristors - SCRanna, Diodes - Zener - Sraith, Túistéirí - DIACs, SIDACanna, Trasraitheoirí - Bipolar (BJT) - RF and Trasraitheoirí - IGBTanna - Aonair ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SI4477DY-T1-GE3 electronic components. SI4477DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4477DY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4477DY-T1-GE3 Tréithe Táirge
Cuid Uimhir :
SI4477DY-T1-GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET P-CH 20V 26.6A 8-SOIC
Sraith :
TrenchFET®
Stádas Cuid :
Active
Cineál FET :
P-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
20V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
26.6A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
6.2 mOhm @ 18A, 4.5V
Vgs (ú) (Max) @ Id :
1.5V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
190nC @ 10V
Vgs (Max) :
±12V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
4600pF @ 10V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
3W (Ta), 6.6W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
8-SO
Pacáiste / Cás :
8-SOIC (0.154", 3.90mm Width)
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