Cuid Uimhir :
GP2M002A065PG
Monaróir :
Global Power Technologies Group
Cur síos :
MOSFET N-CH 650V 1.8A IPAK
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
650V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
1.8A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
4.6 Ohm @ 900mA, 10V
Vgs (ú) (Max) @ Id :
5V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
8.5nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
353pF @ 25V
Díscaoileadh Cumhachta (Max) :
52W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Through Hole
Pacáiste Gléas Soláthraithe :
I-PAK
Pacáiste / Cás :
TO-251-3 Short Leads, IPak, TO-251AA