Cuid Uimhir :
SCT3022KLGC11
Monaróir :
Rohm Semiconductor
Cur síos :
SCT3022KL IS AN SIC SILICON CAR
Teicneolaíocht :
SiCFET (Silicon Carbide)
Drain to Voltage Source (Vdss) :
1200V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
95A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
18V
Rds On (Max) @ Id, Vgs :
28.6 mOhm @ 36A, 18V
Vgs (ú) (Max) @ Id :
5.6V @ 18.2mA
Muirear Geata (Qg) (Max) @ Vgs :
178nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
2879pF @ 800V
Díscaoileadh Cumhachta (Max) :
427W
Teocht Oibriúcháin :
175°C (TJ)
Cineál Gléasta :
Through Hole
Pacáiste Gléas Soláthraithe :
TO-247N
Pacáiste / Cás :
TO-247-3