[127pcs Stoc]
- Cuid Uimhir:
- IPB11N03LA G
- Monaróir:
- Infineon Technologies
- Cur síos mionsonraithe:
- MOSFET N-CH 25V 30A D2PAK.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - Neamhfheidhmiú Inchláraithe, Trasraitheoirí - IGBTanna - Eagair, Diodes - Rectifiers - Eagair, Diodes - Rectifiers Bridge, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Trasraitheoirí - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Aonair and Trasraitheoirí - Bipolar (BJT) - Sraitheanna ...
- Buntáiste iomaíoch:
- We specialize in Infineon Technologies IPB11N03LA G electronic components. IPB11N03LA G can be shipped within 24 hours after order. If you have any demands for IPB11N03LA G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB11N03LA G Tréithe Táirge
Cuid Uimhir :
IPB11N03LA G
Monaróir :
Infineon Technologies
Cur síos :
MOSFET N-CH 25V 30A D2PAK
Sraith :
OptiMOS™
Stádas Cuid :
Obsolete
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
25V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
30A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
11.2 mOhm @ 30A, 10V
Vgs (ú) (Max) @ Id :
2V @ 20µA
Muirear Geata (Qg) (Max) @ Vgs :
11nC @ 5V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
1358pF @ 15V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
52W (Tc)
Teocht Oibriúcháin :
-55°C ~ 175°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
PG-TO263-3-2
Pacáiste / Cás :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
An nuacht is déanaí
B'fhéidir go mbeadh spéis agat freisin
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