SI1011X-T1-GE3 Praghsáil (USD) [12108pcs Stoc]
- 3,000 pcs$0.03480
- Cuid Uimhir:
- SI1011X-T1-GE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET P-CH 12V SC-89.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - JFETanna, Transistors - Bipolar (BJT) - Aonair, Diodes - Rectifiers Bridge, Trasraitheoirí - IGBTanna - Eagair, Trasraitheoirí - IGBTanna - Aonair, Diodes - RF, Thyristors - SCRanna and Diodes - Zener - Sraith ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SI1011X-T1-GE3 electronic components. SI1011X-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI1011X-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI1011X-T1-GE3 Tréithe Táirge
Cuid Uimhir :
SI1011X-T1-GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET P-CH 12V SC-89
Sraith :
TrenchFET®
Stádas Cuid :
Obsolete
Cineál FET :
P-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
12V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
-
Voltas Céide (Max Rds On, Min Rds Ar) :
1.2V, 4.5V
Rds On (Max) @ Id, Vgs :
640 mOhm @ 400mA, 4.5V
Vgs (ú) (Max) @ Id :
800mV @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
4nC @ 4.5V
Vgs (Max) :
±5V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
62pF @ 6V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
190mW (Ta)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
SC-89-3
Pacáiste / Cás :
SC-89, SOT-490
An nuacht is déanaí
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