Microsemi Corporation - JANTX1N6312US

KEY Part #: K6479710

JANTX1N6312US Praghsáil (USD) [279pcs Stoc]

  • 1 pcs$158.60680
  • 10 pcs$150.94992
  • 50 pcs$145.48072
  • 100 pcs$142.19920
  • 250 pcs$140.01152
  • 500 pcs$136.73000
  • 1,000 pcs$131.26080

Cuid Uimhir:
JANTX1N6312US
Monaróir:
Microsemi Corporation
Cur síos mionsonraithe:
DIODE ZENER 3.3V 500MW B-SQ MELF. Zener Diodes Zener Diodes
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - IGBTanna - Aonair, Diodes - RF, Diodes - Zener - Aonair, Trasraitheoirí - Neamhfheidhmiú Inchláraithe, Trasraitheoirí - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Diodes - Toilleadh Athrógach (Varicaps, Varactors) and Trasraitheoirí - IGBTanna - Modúil ...
Buntáiste iomaíoch:
We specialize in Microsemi Corporation JANTX1N6312US electronic components. JANTX1N6312US can be shipped within 24 hours after order. If you have any demands for JANTX1N6312US, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JANTX1N6312US Tréithe Táirge

Cuid Uimhir : JANTX1N6312US
Monaróir : Microsemi Corporation
Cur síos : DIODE ZENER 3.3V 500MW B-SQ MELF
Sraith : Military, MIL-PRF-19500/533
Stádas Cuid : Active
Voltas - Zener (Nom) (Vz) : 3.3V
Lamháltas : ±5%
Cumhacht - Max : 500mW
Impedance (Max) (Zzt) : 27 Ohms
Reatha - Sceitheadh ​​Droim ar Ais @ Vr : 5µA @ 1V
Voltas - Ar Aghaidh (Vf) (Max) @ If : 1.4V @ 1A
Teocht Oibriúcháin : -65°C ~ 175°C
Cineál Gléasta : Surface Mount
Pacáiste / Cás : SQ-MELF, B
Pacáiste Gléas Soláthraithe : B, SQ-MELF

B'fhéidir go mbeadh spéis agat freisin
  • BAW156E6327HTSA1

    Infineon Technologies

    DIODE ARRAY GP 80V 200MA SOT23. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode

  • MMBD1705A

    ON Semiconductor

    DIODE ARRAY GP 30V 50MA SOT23-3.

  • SMBD7000E6327HTSA1

    Infineon Technologies

    DIODE ARRAY GP 100V 200MA SOT23. Diodes - General Purpose, Power, Switching AF DIODE 100V 0.2A

  • 1SS181,LF

    Toshiba Semiconductor and Storage

    DIODE ARRAY GP 80V 100MA SC59. Diodes - General Purpose, Power, Switching Hi Spd Switch Diode 0.1A 80V VR

  • BAV170E6433HTMA1

    Infineon Technologies

    DIODE ARRAY GP 80V 200MA SOT23. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode Array

  • BAV70E6433HTMA1

    Infineon Technologies

    DIODE ARRAY GP 80V 200MA SOT23. Diodes - General Purpose, Power, Switching Silicon Switch Diode 200mA