[3460pcs Stoc]
- Cuid Uimhir:
- PHD23NQ10T,118
- Monaróir:
- NXP USA Inc.
- Cur síos mionsonraithe:
- MOSFET N-CH 100V 23A DPAK.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - IGBTanna - Modúil, Trasraitheoirí - Bipolar (BJT) - Sraitheanna, Diodes - Rectifiers - Aonair, Trasraitheoirí - IGBTanna - Aonair, Trasraitheoirí - IGBTanna - Eagair, Thyristors - SCRanna, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon and Diodes - RF ...
- Buntáiste iomaíoch:
- We specialize in NXP USA Inc. PHD23NQ10T,118 electronic components. PHD23NQ10T,118 can be shipped within 24 hours after order. If you have any demands for PHD23NQ10T,118, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHD23NQ10T,118 Tréithe Táirge
Cuid Uimhir :
PHD23NQ10T,118
Monaróir :
NXP USA Inc.
Cur síos :
MOSFET N-CH 100V 23A DPAK
Sraith :
TrenchMOS™
Stádas Cuid :
Obsolete
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
100V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
23A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
70 mOhm @ 13A, 10V
Vgs (ú) (Max) @ Id :
4V @ 1mA
Muirear Geata (Qg) (Max) @ Vgs :
22nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
1187pF @ 25V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
100W (Tc)
Teocht Oibriúcháin :
-55°C ~ 175°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
DPAK
Pacáiste / Cás :
TO-252-3, DPak (2 Leads + Tab), SC-63
An nuacht is déanaí
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