SQ2301ES-T1_GE3 Praghsáil (USD) [485597pcs Stoc]
- 1 pcs$0.07617
- 3,000 pcs$0.06474
- Cuid Uimhir:
- SQ2301ES-T1_GE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET P-CH 20V 3.9A TO236.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Transistors - Bipolar (BJT) - Aonair, Trasraitheoirí - Bipolar (BJT) - RF, Trasraitheoirí - IGBTanna - Aonair, Trasraitheoirí - Neamhfheidhmiú Inchláraithe, Diodes - Toilleadh Athrógach (Varicaps, Varactors), Trasraitheoirí - JFETanna, Diodes - Rectifiers Bridge and Transistors - FETs, MOSFETs - RF ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SQ2301ES-T1_GE3 electronic components. SQ2301ES-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ2301ES-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQ2301ES-T1_GE3 Tréithe Táirge
Cuid Uimhir :
SQ2301ES-T1_GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET P-CH 20V 3.9A TO236
Sraith :
Automotive, AEC-Q101, TrenchFET®
Stádas Cuid :
Active
Cineál FET :
P-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
20V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
3.9A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
120 mOhm @ 2.8A, 4.5V
Vgs (ú) (Max) @ Id :
1.5V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
8nC @ 4.5V
Vgs (Max) :
±8V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
425pF @ 10V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
3W (Tc)
Teocht Oibriúcháin :
-55°C ~ 175°C (TA)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
TO-236 (SOT-23)
Pacáiste / Cás :
TO-236-3, SC-59, SOT-23-3
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